Dual N-Channel MOSFET Transistor & Diode, 83 A, 650 V, 10-Pin PG-HDSOP Infineon IPDD60R080G7XTMA1

Description

Maximum Drain Source Voltage: 650 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Series: CoolMOS™ G7

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 0.08 O

Package Type: DDPAK

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 83 A

Pin Count: 10

This is Dual N-Channel MOSFET Transistor & Diode 83 A 650 V 10-Pin PG-HDSOP manufactured by Infineon. The manufacturer part number is IPDD60R080G7XTMA1. It has a maximum of 650 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product coolmos™ g7, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.08 o maximum drain source resistance. The package is a sort of ddpak. It consists of 2 elements per chip. While 83 a of maximum continuous drain current. It contains 10 pins.