Infineon IKA08N65H5XKSA1 IGBT, 10.8 A 650 V, 3-Pin TO-220FP

Description

Mounting Type: Through Hole

Maximum Power Dissipation: 31.2 W

Maximum Collector Emitter Voltage: 650 V

Number of Transistors: 1

Channel Type: N

Maximum Continuous Collector Current: 1899-12-31 08:00:00

Maximum Gate Emitter Voltage: ±20 V, ±30V

Package Type: TO-220

Pin Count: 3

This is IGBT 10.8 A 650 V 3-Pin TO-220FP manufactured by Infineon. The manufacturer part number is IKA08N65H5XKSA1. The product is available in through hole configuration. Provides up to 31.2 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 1 transistors . The product is available in [Cannel Type] channel. The product has a maximum 1899-12-31 08:00:00 continuous collector current . It offers a maximum ±20 v, ±30v gate emitter voltage . The package is a sort of to-220. It contains 3 pins.