Fairchild FCP11N60F N-channel MOSFET, 11 A, 600 V SuperFET, 3-Pin TO-220AB

Description

Category: Power MOSFET

Dimensions: 10.1 x 4.7 x 9.4mm

Maximum Continuous Drain Current: 11 A

Transistor Material: Si

Width: 4.7mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Package Type: TO-220AB

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 40 nC @ 10 V

Channel Type: N Typical Input Capacitance @ Vds: 1148 pF @ 25 V Length: 10.1mm Pin Count: 3 Typical Turn-Off Delay Time: 119 ns Mounting Type: Through Hole Channel Mode: Enhancement Maximum Power Dissipation: 125 W Series: SuperFET Maximum Gate Source Voltage: ±30 V Height: 9.4mm Typical Turn-On Delay Time: 34 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 380 mΩ

This is Fairchild N-channel MOSFET 11 A 600 V SuperFET 3-Pin TO-220AB manufactured by Fairchild Semiconductor. The manufacturer part number is FCP11N60F. It is of power mosfet category . The given dimensions of the product include 10.1 x 4.7 x 9.4mm. While 11 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.7mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 40 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 1148 pf @ 25 v . Its accurate length is 10.1mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 119 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 125 w maximum power dissipation. The product superfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 9.4mm. In addition, it has a typical 34 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 380 mω maximum drain source resistance.