Fairchild FDMS86350 N-channel MOSFET, 130 A, 80 V PowerTrench, 8-Pin Power 56

Description

Category: Power MOSFET

Dimensions: 5.1 x 6.25 x 1.05mm

Maximum Continuous Drain Current: 130 A

Transistor Material: Si

Width: 6.25mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 80 V

Package Type: Power 56

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2.5V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 110 nC @ 10 V

Channel Type: N Typical Input Capacitance @ Vds: 8030 pF @ 40 V Length: 5.1mm Pin Count: 8 Typical Turn-Off Delay Time: 40 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 156 W Series: PowerTrench Maximum Gate Source Voltage: ±20 V Height: 1.05mm Typical Turn-On Delay Time: 50 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 3.8 mΩ

This is Fairchild N-channel MOSFET 130 A 80 V PowerTrench 8-Pin Power 56 manufactured by Fairchild Semiconductor. The manufacturer part number is FDMS86350. It is of power mosfet category . The given dimensions of the product include 5.1 x 6.25 x 1.05mm. While 130 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 6.25mm wide. The product offers single transistor configuration. It has a maximum of 80 v drain source voltage. The package is a sort of power 56. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 110 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 8030 pf @ 40 v . Its accurate length is 5.1mm. It contains 8 pins. Whereas, its typical turn-off delay time is about 40 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 156 w maximum power dissipation. The product powertrench, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.05mm. In addition, it has a typical 50 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.8 mω maximum drain source resistance.