Infineon BSC082N10LSG N-channel MOSFET, 100 A, 100 V OptiMOS 2, 8-Pin TDSON

Description

Category: Power MOSFET

Dimensions: 6.1 x 5.35 x 1.1mm

Maximum Continuous Drain Current: 100 A

Transistor Material: Si

Width: 5.35mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 100 V

Package Type: TDSON

Number of Elements per Chip: 1

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 78 nC @ 10 V

Channel Type: N

Typical Input Capacitance @ Vds: 5600 pF @ 50 V Length: 6.1mm Pin Count: 8 Forward Transconductance: 119S Typical Turn-Off Delay Time: 53 ns Mounting Type: Surface Mount Channel Mode: Enhancement Maximum Power Dissipation: 156 W Series: OptiMOS 2 Maximum Gate Source Voltage: ±20 V Height: 1.1mm Typical Turn-On Delay Time: 19 ns Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 8.2 mΩ

This is N-channel MOSFET 100 A 100 V OptiMOS 2 8-Pin TDSON manufactured by Infineon. The manufacturer part number is BSC082N10LSG. It is of power mosfet category . The given dimensions of the product include 6.1 x 5.35 x 1.1mm. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.35mm wide. The product offers single transistor configuration. It has a maximum of 100 v drain source voltage. The package is a sort of tdson. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 78 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 5600 pf @ 50 v . Its accurate length is 6.1mm. It contains 8 pins. The forward transconductance is 119s . Whereas, its typical turn-off delay time is about 53 ns . The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 156 w maximum power dissipation. The product optimos 2, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.1mm. In addition, it has a typical 19 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 8.2 mω maximum drain source resistance.