Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V

Description

Maximum Power Dissipation: 175 W

Maximum Collector Emitter Voltage: 1200 V

Number of Transistors: 7

Maximum Continuous Collector Current: 39 A

Maximum Gate Emitter Voltage: +/-20V

This is IGBT Module 39 A 1200 V manufactured by Infineon. The manufacturer part number is FP25R12W2T4B11BOMA1. Provides up to 175 w maximum power dissipation. Whereas features a 1200 v of collector emitter voltage (max). It has 7 transistors . The product has a maximum 39 a continuous collector current . It offers a maximum +/-20v gate emitter voltage .