IXYS IXFQ34N50P3

Description

Maximum Continuous Drain Current: 34 A

Transistor Material: Si

Width: 4.9mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 500 V

Maximum Gate Threshold Voltage: 5V

Package Type: TO-3PN

Number of Elements per Chip: 1

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 60 nC @ 10 V

Channel Type: N

Length: 15.8mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 695 W Series: HiperFET, Polar3 Maximum Gate Source Voltage: -30 V, +30 V Height: 20.3mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 175 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 5V @ 4mA Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-3P-3, SC-65-3 Rds On (Max) @ Id, Vgs: 170mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10VPackage: Tube Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 695W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 3260 pF @ 25 V standardLeadTime: 59 Weeks Mounting Type: Through Hole Series: HiPerFET™, Polar3™ Supplier Device Package: TO-3P Current – Continuous Drain (Id) @ 25°C: 34A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: IXFQ34 ECCN: EAR99

This ismanufactured by IXYS. The manufacturer part number is IXFQ34N50P3. While 34 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-3pn. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.8mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 695 w maximum power dissipation. The product hiperfet, polar3, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.3mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 175 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 4ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-3p-3, sc-65-3. It has a maximum Rds On and voltage of 170mohm @ 17a, 10v. The maximum gate charge and given voltages include 60 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 695w (tc). The product’s input capacitance at maximum includes 3260 pf @ 25 v. It has a long 59 weeks standard lead time. The product hiperfet™, polar3™, is a highly preferred choice for users. to-3p is the supplier device package value. The continuous current drain at 25°C is 34a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixfq34, a base product number of the product. The product is designated with the ear99 code number.