IXYS IXFT60N65X2HV

Description

Maximum Continuous Drain Current: 60 A

Width: 15.15mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 650 V

Maximum Gate Threshold Voltage: 5V

Package Type: TO-268HV

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3.5V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 108 nC @ 10 V

Channel Type: N

Length: 16.05mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 780 W Series: HiperFET Maximum Gate Source Voltage: ±30 V Height: 5.1mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.4V Maximum Drain Source Resistance: 52 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Rds On (Max) @ Id, Vgs: 52mOhm @ 30A, 10V title: IXFT60N65X2HV Vgs(th) (Max) @ Id: 5V @ 4mA REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Moisture Sensitivity Level (MSL): 3 (168 Hours) Power Dissipation (Max): 780W (Tc) standardLeadTime: 32 Weeks Input Capacitance (Ciss) (Max) @ Vds: 6300 pF @ 25 V Mounting Type: Surface Mount Series: HiPerFET™, Ultra X2 Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Supplier Device Package: TO-268HV (IXFT) Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 60A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: IXFT60 ECCN: EAR99

This ismanufactured by IXYS. The manufacturer part number is IXFT60N65X2HV. While 60 a of maximum continuous drain current. Furthermore, the product is 15.15mm wide. The product offers single transistor configuration. It has a maximum of 650 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-268hv. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3.5v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 108 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 16.05mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 780 w maximum power dissipation. The product hiperfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±30 v. In addition, the height is 5.1mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.4v . It provides up to 52 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-268-3, d3pak (2 leads + tab), to-268aa. It has a maximum Rds On and voltage of 52mohm @ 30a, 10v. The typical Vgs (th) (max) of the product is 5v @ 4ma. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 650 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 3 (168 hours). The product carries maximum power dissipation 780w (tc). It has a long 32 weeks standard lead time. The product’s input capacitance at maximum includes 6300 pf @ 25 v. The product hiperfet™, ultra x2, is a highly preferred choice for users. The maximum gate charge and given voltages include 108 nc @ 10 v. to-268hv (ixft) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ixft60, a base product number of the product. The product is designated with the ear99 code number.