MOSFET 600V 28A w/Fast Diode TO-247AC

Description

Maximum Continuous Drain Current: 28 A

Transistor Material: Si

Width: 5.31mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Package Type: TO-247AC

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 80 nC @ 10 V

Channel Type: N

Length: 15.87mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 250 W Series: EF Series Maximum Gate Source Voltage: -30 V, +30 V Height: 20.82mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 123 mΩ

This is MOSFET 600V 28A w/Fast Diode TO-247AC manufactured by Vishay. The manufacturer part number is SIHG28N60EF-GE3. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 80 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 250 w maximum power dissipation. The product ef series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 123 mω maximum drain source resistance.