N-Channel 200 V (D-S) MOSFET

Description

Maximum Drain Source Voltage: 200 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Series: TrenchFET

Channel Type: N

Maximum Gate Threshold Voltage: 4V

Maximum Drain Source Resistance: 0.0109 Ω

Package Type: TO-220

Number of Elements per Chip: 2

Maximum Continuous Drain Current: 150 A

Transistor Material: Si

Pin Count: 3

This is N-Channel 200 V (D-S) MOSFET manufactured by Vishay. The manufacturer part number is SUP90100E-GE3. It has a maximum of 200 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product trenchfet, is a highly preferred choice for users. The product is available in [Cannel Type] channel. The product carries 4v of maximum gate threshold voltage. It provides up to 0.0109 ω maximum drain source resistance. The package is a sort of to-220. It consists of 2 elements per chip. While 150 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It contains 3 pins.