ON Semiconductor HGTG30N60B3

Description

Dimensions: 15.87 x 4.82 x 20.82mm

Mounting Type: Through Hole

Maximum Power Dissipation: 208 W

Maximum Collector Emitter Voltage: 600 V

Channel Type: N

Maximum Continuous Collector Current: 60 A

Maximum Gate Emitter Voltage: ±20V

Package Type: TO-247

Minimum Operating Temperature: -55 °C

Switching Speed: 1MHz

Maximum Operating Temperature: +150 °C

Pin Count: 3

Transistor Configuration: Single Gate Charge: 170nC Base Part Number: HGTG30 Detailed Description: IGBT 600V 60A 208W Through Hole TO-247-3 Mounting Type: Through Hole Current – Collector (Ic) (Max): 60A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Operating Temperature: -55°C ~ 150°C (TJ) Supplier Device Package: TO-247-3 Packaging: Tube Switching Energy: 500µJ (on), 680µJ (off) Td (on/off) @ 25°C: 36ns/137ns Power – Max: 208W Customer Reference: Input Type: Standard Package / Case: TO-247-3 Voltage – Collector Emitter Breakdown (Max): 600V Test Condition: 480V, 30A, 3Ohm, 15V Current – Collector Pulsed (Icm): 220A Manufacturer: ON Semiconductor

This ismanufactured by ON Semiconductor. The manufacturer part number is HGTG30N60B3. The given dimensions of the product include 15.87 x 4.82 x 20.82mm. The product is available in through hole configuration. Provides up to 208 w maximum power dissipation. Whereas features a 600 v of collector emitter voltage (max). The product is available in [Cannel Type] channel. The product has a maximum 60 a continuous collector current . It offers a maximum ±20v gate emitter voltage . The package is a sort of to-247. Whereas, the minimum operating temperature of the product is -55 °c. It has about 1mhz switching speed . It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Features 170nc gate charge. Base Part Number: hgtg30. It features igbt 600v 60a 208w through hole to-247-3. The maximum collector current includes 60a. Features 1.9v @ 15v, 30a. The product has -55°c ~ 150°c (tj) operating temperature range. to-247-3 is the supplier device package value. In addition, tube is the available packaging type of the product. Provide switching energy up to 500µj (on), 680µj (off). Td (on/off) value of 36ns/137ns. The maximum power of the product is 208w. It carries standard input type. Moreover, the product comes in to-247-3. The maximum collector emitter breakdown voltage of the product is 600v. Test condition included 480v, 30a, 3ohm, 15v. With a current – collector pulsed of [Current – Collector Pulsed (lcm)] . The on semiconductor’s product offers user-desired applications.