Silicon N-Channel MOSFET, 19 A, 600 V, 8-Pin 10 x 12 Vishay SIHK155N60E-T1-GE3

Description

Maximum Drain Source Voltage: 600 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Channel Type: N

Package Type: 10 x 12

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 19 A

Transistor Material: Silicon

Pin Count: 8

This is Silicon N-Channel MOSFET 19 A 600 V 8-Pin 10 x 12 manufactured by Vishay. The manufacturer part number is SIHK155N60E-T1-GE3. It has a maximum of 600 v drain source voltage. The product is available in surface mount configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of 10 x 12. It consists of 1 elements per chip. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 8 pins.