Silicon N-Channel MOSFET, 21 A, 600 V, 3-Pin TO-220AB Vishay SIHP155N60EF-GE3

Description

Maximum Drain Source Voltage: 600 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Channel Type: N

Package Type: TO-220AB

Number of Elements per Chip: 1

Maximum Continuous Drain Current: 21 A

Transistor Material: Silicon

Pin Count: 3

This is Silicon N-Channel MOSFET 21 A 600 V 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SIHP155N60EF-GE3. It has a maximum of 600 v drain source voltage. The product is available in through hole configuration. The product carries enhancement channel mode. The product is available in [Cannel Type] channel. The package is a sort of to-220ab. It consists of 1 elements per chip. While 21 a of maximum continuous drain current. The transistor is manufactured from highly durable silicon material. It contains 3 pins.