Single IGBT Transistor Module, 50 A 650 V PG-TO247-3

Description

Maximum Power Dissipation: 305 W

Maximum Collector Emitter Voltage: 650 V

Number of Transistors: 2

Maximum Continuous Collector Current: 50 A

Maximum Gate Emitter Voltage: 15V

Package Type: PG-TO247-3

Configuration: Single

This is Single IGBT Transistor Module 50 A 650 V PG-TO247-3 manufactured by Infineon. The manufacturer part number is IKW50N65RH5XKSA1. Provides up to 305 w maximum power dissipation. Whereas features a 650 v of collector emitter voltage (max). It has 2 transistors . The product has a maximum 50 a continuous collector current . It offers a maximum 15v gate emitter voltage . The package is a sort of pg-to247-3. The product is available in single configuration.