STMicroelectronics STF35N60DM2

Description

Maximum Continuous Drain Current: 28 A

Transistor Material: Si

Width: 4.6mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Maximum Gate Threshold Voltage: 5V

Package Type: TO-220FP

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 54 nC @ 10 V

Channel Type: N

Length: 10.4mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 40 W Series: MDmesh DM2 Maximum Gate Source Voltage: -25 V, +25 V Height: 16.4mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.6V Maximum Drain Source Resistance: 110 mΩ FET Feature: – HTSUS: 8541.29.0095 RoHS Status: ROHS3 Compliant Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: TO-220-3 Full Pack Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V title: STF35N60DM2 Vgs(th) (Max) @ Id: 5V @ 250µA REACH Status: REACH Unaffected edacadModel: STF35N60DM2 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/5866610 Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 40W (Tc) standardLeadTime: 16 Weeks Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V Mounting Type: Through Hole Series: MDmesh™ DM2 Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Supplier Device Package: TO-220FP Packaging: Tube Current – Continuous Drain (Id) @ 25°C: 28A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STF35 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STF35N60DM2. While 28 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 54 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product mdmesh dm2, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 16.4mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.6v . It provides up to 110 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 110mohm @ 14a, 10v. The typical Vgs (th) (max) of the product is 5v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±25v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 40w (tc). It has a long 16 weeks standard lead time. The product’s input capacitance at maximum includes 2400 pf @ 100 v. The product mdmesh™ dm2, is a highly preferred choice for users. The maximum gate charge and given voltages include 54 nc @ 10 v. to-220fp is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 28a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stf35, a base product number of the product. The product is designated with the ear99 code number.