STMicroelectronics STI260N6F6

Description

Category: Power MOSFET

Dimensions: 10.4 x 4.6 x 10.75mm

Maximum Continuous Drain Current: 120 A

Transistor Material: Si

Width: 4.6mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 60 V

Maximum Gate Threshold Voltage: 4V

Package Type: I2PAK

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 183 nC @ 10 V Channel Type: N Typical Input Capacitance @ Vds: 11400 pF @ 25 V Length: 10.4mm Pin Count: 3 Typical Turn-Off Delay Time: 144.4 ns Mounting Type: Through Hole Channel Mode: Enhancement Maximum Power Dissipation: 300 W Series: DeepGate, STripFET Maximum Gate Source Voltage: ±20 V Height: 10.75mm Typical Turn-On Delay Time: 31.4 ns Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 3 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 4V @ 250µA Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V edacadModel: STI260N6F6 Models Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/2674480Package: Tube Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 300W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 VMounting Type: Through Hole Series: DeepGATE™, STripFET™ VI Supplier Device Package: I2PAK Current – Continuous Drain (Id) @ 25°C: 120A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STI260N ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STI260N6F6. It is of power mosfet category . The given dimensions of the product include 10.4 x 4.6 x 10.75mm. While 120 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 60 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of i2pak. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 183 nc @ 10 v. The product is available in [Cannel Type] channel. Its typical input capacitance @ Vds is 11400 pf @ 25 v . Its accurate length is 10.4mm. It contains 3 pins. Whereas, its typical turn-off delay time is about 144.4 ns . The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 300 w maximum power dissipation. The product deepgate, stripfet, is a highly preferred choice for users. It features a maximum gate source voltage of ±20 v. In addition, the height is 10.75mm. In addition, it has a typical 31.4 ns turn-on delay time . Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-262-3 long leads, i²pak, to-262aa. It has a maximum Rds On and voltage of 3mohm @ 60a, 10v. The maximum gate charge and given voltages include 183 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 75 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 300w (tc). The product’s input capacitance at maximum includes 11400 pf @ 25 v. The product deepgate™, stripfet™ vi, is a highly preferred choice for users. i2pak is the supplier device package value. The continuous current drain at 25°C is 120a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sti260n, a base product number of the product. The product is designated with the ear99 code number.