STMicroelectronics STP4N150

Description

Maximum Continuous Drain Current: 4 A

Transistor Material: Si

Width: 4.6mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 1500 V

Maximum Gate Threshold Voltage: 5V

Package Type: TO-220

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 3V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 30 nC @ 10 V

Channel Type: N

Length: 10.4mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 160 W Series: MDmesh Maximum Gate Source Voltage: -30 V, +30 V Height: 15.75mm Maximum Drain Source Resistance: 7 Ω FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 5V @ 250µA Operating Temperature: 150°C (TJ) Package / Case: TO-220-3 Rds On (Max) @ Id, Vgs: 7Ohm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected edacadModel: STP4N150 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10V edacadModelUrl: /en/models/1115156Package: Tube Drain to Source Voltage (Vdss): 1500 V Vgs (Max): ±30V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 160W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V standardLeadTime: 26 Weeks Mounting Type: Through Hole Series: PowerMESH™ Supplier Device Package: TO-220 Current – Continuous Drain (Id) @ 25°C: 4A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STP4N150 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STP4N150. While 4 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 1500 v drain source voltage. The product carries 5v of maximum gate threshold voltage. The package is a sort of to-220. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 3v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 30 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 160 w maximum power dissipation. The product mdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 15.75mm. It provides up to 7 ω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 5v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3. It has a maximum Rds On and voltage of 7ohm @ 2a, 10v. The maximum gate charge and given voltages include 50 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 1500 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 160w (tc). The product’s input capacitance at maximum includes 1300 pf @ 25 v. It has a long 26 weeks standard lead time. The product powermesh™, is a highly preferred choice for users. to-220 is the supplier device package value. The continuous current drain at 25°C is 4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stp4n150, a base product number of the product. The product is designated with the ear99 code number.