Texas Instruments CSD16321Q5

Description

Maximum Continuous Drain Current: 100 A

Transistor Material: Si

Width: 5.1mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 25 V

Maximum Gate Threshold Voltage: 1.4V

Package Type: VSON-CLIP

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 0.9V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 14 nC @ 4.5 V

Channel Type: N

Length: 6.1mm Pin Count: 8 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 3.1 W Series: NexFET Maximum Gate Source Voltage: -8 V, +10 V Height: 1.05mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 3.8 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 1.4V @ 250µA Operating Temperature: -55°C ~ 150°C (TJ) Package / Case: 8-PowerTDFN Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 8V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected edacadModel: CSD16321Q5 Models FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 3V, 8V edacadModelUrl: /en/models/2062290Package: Tape & Reel (TR) Drain to Source Voltage (Vdss): 25 V Vgs (Max): +10V, -8V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 3.1W (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12.5 V standardLeadTime: 6 Weeks Mounting Type: Surface Mount Series: NexFET™ Supplier Device Package: 8-VSON-CLIP (5×6) Current – Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: CSD16321 ECCN: EAR99

This ismanufactured by Texas Instruments. The manufacturer part number is CSD16321Q5. While 100 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.1mm wide. The product offers single transistor configuration. It has a maximum of 25 v drain source voltage. The product carries 1.4v of maximum gate threshold voltage. The package is a sort of vson-clip. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 0.9v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 14 nc @ 4.5 v. The product is available in [Cannel Type] channel. Its accurate length is 6.1mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 3.1 w maximum power dissipation. The product nexfet, is a highly preferred choice for users. It features a maximum gate source voltage of -8 v, +10 v. In addition, the height is 1.05mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 3.8 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-powertdfn. It has a maximum Rds On and voltage of 2.4mohm @ 25a, 8v. The maximum gate charge and given voltages include 19 nc @ 4.5 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 3v, 8v. It is shipped in tape & reel (tr) package . The product has a 25 v drain to source voltage. The maximum Vgs rate is +10v, -8v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.1w (ta). The product’s input capacitance at maximum includes 3100 pf @ 12.5 v. It has a long 6 weeks standard lead time. The product nexfet™, is a highly preferred choice for users. 8-vson-clip (5×6) is the supplier device package value. The continuous current drain at 25°C is 31a (ta), 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to csd16321, a base product number of the product. The product is designated with the ear99 code number.