Vishay IRFB9N60APBF N-channel MOSFET, 9.2 A, 600 V, 3-Pin TO-220AB

Description

Maximum Continuous Drain Current: 9.2 A

Transistor Material: Si

Width: 4.7mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Package Type: TO-220AB

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 49 nC @ 10 V

Channel Type: N

Length: 10.41mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 170 W Maximum Gate Source Voltage: -30 V, +30 V Height: 9.01mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 750 mΩ

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor MOSFET Transistors, Vishay Semiconductor