Vishay IRFB9N65APBF N-channel MOSFET, 8.5 A, 650 V, 3-Pin TO-220AB

Description

Maximum Drain Source Voltage: 650 V

Typical Gate Charge @ Vgs: 48 nC @ 10 V

Mounting Type: Through Hole

Channel Mode: Enhancement

Maximum Power Dissipation: 167 W

Maximum Gate Source Voltage: -30 V, +30 V

Height: 9.01mm

Width: 4.7mm

Length: 10.41mm

Minimum Gate Threshold Voltage: 2V

Package Type: TO-220AB

Number of Elements per Chip: 1

Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 8.5 A Transistor Material: Si Maximum Drain Source Resistance: 930 mΩ Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 3 Transistor Configuration: Single

This is N-channel MOSFET 8.5 A 650 V 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is IRFB9N65APBF. It has a maximum of 650 v drain source voltage. With a typical gate charge at Vgs includes 48 nc @ 10 v. The product is available in through hole configuration. The product carries enhancement channel mode. Provides up to 167 w maximum power dissipation. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 9.01mm. Furthermore, the product is 4.7mm wide. Its accurate length is 10.41mm. Whereas its minimum gate threshold voltage includes 2v. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 8.5 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 930 mω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration.