Vishay SI4190ADY-T1-GE3 N-channel MOSFET, 18 A, 100 V, 8-Pin SOIC

Description

Maximum Drain Source Voltage: 100 V

Typical Gate Charge @ Vgs: 44.4 nC @ 10 V

Mounting Type: Surface Mount

Channel Mode: Enhancement

Maximum Power Dissipation: 6 W

Maximum Gate Source Voltage: -20 V, +20 V

Height: 1.5mm

Width: 4mm

Length: 5mm

Minimum Gate Threshold Voltage: 1.5V

Package Type: SOIC

Number of Elements per Chip: 1

Minimum Operating Temperature: -55 °C Maximum Continuous Drain Current: 18 A Transistor Material: Si Maximum Drain Source Resistance: 2.2 Ω Channel Type: N Maximum Operating Temperature: +150 °C Pin Count: 8 Transistor Configuration: Single

This is N-channel MOSFET 18 A 100 V 8-Pin SOIC manufactured by Vishay. The manufacturer part number is SI4190ADY-T1-GE3. It has a maximum of 100 v drain source voltage. With a typical gate charge at Vgs includes 44.4 nc @ 10 v. The product is available in surface mount configuration. The product carries enhancement channel mode. Provides up to 6 w maximum power dissipation. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 1.5mm. Furthermore, the product is 4mm wide. Its accurate length is 5mm. Whereas its minimum gate threshold voltage includes 1.5v. The package is a sort of soic. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. While 18 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. It provides up to 2.2 ω maximum drain source resistance. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c. It contains 8 pins. The product offers single transistor configuration.