Vishay SIHG20N50E-GE3 N-channel MOSFET, 19 A, 500 V E Series, 3-Pin TO-247AC

Description

Maximum Continuous Drain Current: 19 A

Transistor Material: Si

Width: 5.31mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 500 V

Maximum Gate Threshold Voltage: 4V

Package Type: TO-247AC

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 46 nC @ 10 V

Channel Type: N

Length: 15.87mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 179 W Series: E Series Maximum Gate Source Voltage: -30 V, +30 V Height: 20.82mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 180 mΩ

This is N-channel MOSFET 19 A 500 V E Series 3-Pin TO-247AC manufactured by Vishay. The manufacturer part number is SIHG20N50E-GE3. While 19 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 5.31mm wide. The product offers single transistor configuration. It has a maximum of 500 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-247ac. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 46 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 15.87mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 179 w maximum power dissipation. The product e series, is a highly preferred choice for users. It features a maximum gate source voltage of -30 v, +30 v. In addition, the height is 20.82mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 180 mω maximum drain source resistance.