Vishay SiHP30N60E-GE3 N-channel MOSFET, 29 A, 600 V E Series, 3-Pin TO-220AB

Description

Maximum Continuous Drain Current: 29 A

Transistor Material: Si

Width: 4.65mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Package Type: TO-220AB

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 85 nC @ 10 V

Channel Type: N

Length: 10.51mm

Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 250 W Series: E Series Maximum Gate Source Voltage: -20 V, +20 V Height: 15.49mm Minimum Operating Temperature: -55 °C Maximum Drain Source Resistance: 125 mΩ

This is N-channel MOSFET 29 A 600 V E Series 3-Pin TO-220AB manufactured by Vishay. The manufacturer part number is SiHP30N60E-GE3. While 29 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.65mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 85 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.51mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 250 w maximum power dissipation. The product e series, is a highly preferred choice for users. It features a maximum gate source voltage of -20 v, +20 v. In addition, the height is 15.49mm. Whereas, the minimum operating temperature of the product is -55 °c. It provides up to 125 mω maximum drain source resistance.