N-Channel MOSFET, 330 A, 40 V, 8-Pin LFPAK ON Semiconductor NTMJS0D9N04CLTWG

Description

Maximum Continuous Drain Current: 330 A

Width: 4.9mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 40 V

Maximum Gate Threshold Voltage: 2V

Package Type: LFPAK8

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 1.2V

Maximum Operating Temperature: +175 °C

Typical Gate Charge @ Vgs: 143 nC @ 10 V

Channel Type: N

Length: 5mm

Pin Count: 8 Channel Mode: Enhancement Mounting Type: Surface Mount Maximum Power Dissipation: 167 W Maximum Gate Source Voltage: ±20 V Height: 1.2mm Minimum Operating Temperature: -55 °C Forward Diode Voltage: 1.2V Maximum Drain Source Resistance: 1.2 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 2V @ 190µA Operating Temperature: -55°C ~ 175°C (TJ) Package / Case: SOT-1205, 8-LFPAK56 Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10VPackage: Tape & Reel (TR) Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V standardLeadTime: 19 Weeks Mounting Type: Surface Mount Series: – Supplier Device Package: 8-LFPAK Current – Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: NTMJS0 ECCN: EAR99

This is N-Channel MOSFET 330 A 40 V 8-Pin LFPAK ON Semiconductor manufactured by onsemi. The manufacturer part number is NTMJS0D9N04CLTWG. While 330 a of maximum continuous drain current. Furthermore, the product is 4.9mm wide. The product offers single transistor configuration. It has a maximum of 40 v drain source voltage. The product carries 2v of maximum gate threshold voltage. The package is a sort of lfpak8. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 1.2v. It has a maximum operating temperature of +175 °c. With a typical gate charge at Vgs includes 143 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 5mm. It contains 8 pins. The product carries enhancement channel mode. The product is available in surface mount configuration. Provides up to 167 w maximum power dissipation. It features a maximum gate source voltage of ±20 v. In addition, the height is 1.2mm. Whereas, the minimum operating temperature of the product is -55 °c. Its forward diode voltage is 1.2v . It provides up to 1.2 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 190µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in sot-1205, 8-lfpak56. It has a maximum Rds On and voltage of 0.82mohm @ 50a, 10v. The maximum gate charge and given voltages include 143 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 40 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.8w (ta), 167w (tc). The product’s input capacitance at maximum includes 8862 pf @ 25 v. It has a long 19 weeks standard lead time. 8-lfpak is the supplier device package value. The continuous current drain at 25°C is 50a (ta), 330a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ntmjs0, a base product number of the product. The product is designated with the ear99 code number.