STMicroelectronics STF26NM60N

Description

Maximum Continuous Drain Current: 20 A

Transistor Material: Si

Width: 4.6mm

Transistor Configuration: Single

Maximum Drain Source Voltage: 600 V

Maximum Gate Threshold Voltage: 4V

Package Type: TO-220FP

Number of Elements per Chip: 1

Minimum Gate Threshold Voltage: 2V

Maximum Operating Temperature: +150 °C

Typical Gate Charge @ Vgs: 60 nC @ 10 V

Channel Type: N

Length: 10.4mm Pin Count: 3 Channel Mode: Enhancement Mounting Type: Through Hole Maximum Power Dissipation: 35 W Series: MDmesh Maximum Gate Source Voltage: -25 V, +25 V Height: 16.4mm Maximum Drain Source Resistance: 165 mΩ FET Feature: – HTSUS: 8541.29.0095 Vgs(th) (Max) @ Id: 4V @ 250µA Operating Temperature: 150°C (TJ) Package / Case: TO-220-3 Full Pack Rds On (Max) @ Id, Vgs: 165mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V RoHS Status: ROHS3 Compliant REACH Status: REACH Unaffected FET Type: N-Channel Drive Voltage (Max Rds On, Min Rds On): 10VPackage: Tube Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Moisture Sensitivity Level (MSL): 1 (Unlimited) Power Dissipation (Max): 35W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 50 V standardLeadTime: 16 Weeks Mounting Type: Through Hole Series: MDmesh™ II Supplier Device Package: TO-220FP Current – Continuous Drain (Id) @ 25°C: 20A (Tc) Technology: MOSFET (Metal Oxide) Base Product Number: STF26 ECCN: EAR99

This ismanufactured by STMicroelectronics. The manufacturer part number is STF26NM60N. While 20 a of maximum continuous drain current. The transistor is manufactured from highly durable si material. Furthermore, the product is 4.6mm wide. The product offers single transistor configuration. It has a maximum of 600 v drain source voltage. The product carries 4v of maximum gate threshold voltage. The package is a sort of to-220fp. It consists of 1 elements per chip. Whereas its minimum gate threshold voltage includes 2v. It has a maximum operating temperature of +150 °c. With a typical gate charge at Vgs includes 60 nc @ 10 v. The product is available in [Cannel Type] channel. Its accurate length is 10.4mm. It contains 3 pins. The product carries enhancement channel mode. The product is available in through hole configuration. Provides up to 35 w maximum power dissipation. The product mdmesh, is a highly preferred choice for users. It features a maximum gate source voltage of -25 v, +25 v. In addition, the height is 16.4mm. It provides up to 165 mω maximum drain source resistance. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-220-3 full pack. It has a maximum Rds On and voltage of 165mohm @ 10a, 10v. The maximum gate charge and given voltages include 60 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tube package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 35w (tc). The product’s input capacitance at maximum includes 1800 pf @ 50 v. It has a long 16 weeks standard lead time. The product mdmesh™ ii, is a highly preferred choice for users. to-220fp is the supplier device package value. The continuous current drain at 25°C is 20a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to stf26, a base product number of the product. The product is designated with the ear99 code number.